SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
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United States of America Patent
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Issued Date -
Jun 13, 2024
app pub date -
Nov 29, 2023
filing date -
Dec 7, 2022
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Abstract
The application refers to a semiconductor device including: a semiconductor body having a first surface and a second surface; an active region having at least one semiconductor cell configured to conduct a load current between the first surface and the second surface; an edge termination region separating the active region from a chip edge; and a first layer within at least a part of the edge termination region. The first layer includes silicon, nitrogen and hydrogen. In atomic numbers, a ratio of the silicon to the nitrogen is at least 3.3 to 4 in at least a portion of the first layer. At least the portion of the first layer includes at most 16 percent hydrogen in atomic numbers.
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