Importance

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Abstract

A processing apparatus includes a chuck table for holding a bonded wafer thereon, a grinding unit for grinding the bonded wafer, a cleaning unit for cleaning the bonded wafer, and a processing unit for removing a beveled portion of an outer circumferential end portion of the bonded wafer before the grinding unit grinds the bonded wafer. The processing unit includes a support for supporting the bonded wafer with a surface thereof being exposed and a laser beam applying unit for emitting a laser beam having a wavelength transmittable through the wafer. The laser beam applying unit applies the laser beam to the wafer supported on the support, from the exposed surface, while positioning a focused spot thereof within the outer circumferential excessive region of the wafer, to form a modified layer in the wafer along which to remove the beveled portion from the wafer.

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First Claim