ATOMIC LAYER DEPOSITION DEVICE USING MULTIPLE PULSES TO FILL GAP OF SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO AND ATOMIC LAYER DEPOSITION METHOD USING THE SAME
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United States of America Patent
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Jun 13, 2024
app pub date -
Dec 8, 2023
filing date -
Dec 9, 2022
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One embodiment of the present invention provides an atomic layer deposition device for filling a gap of a semiconductor structure with a high aspect ratio and a method of manufacturing the same. According to the atomic layer deposition method of filling the gap of the semiconductor structure with the high aspect ratio according to one embodiment of the present invention, it is possible to remove an overhang at an pattern top at the same time as deposition and perform the gap-filling to remove a void and a seam by improving bottom-up deposition in a high aspect ratio structure of 40:1 or more.
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