GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL
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United States of America Patent
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Issued Date -
Jun 13, 2024
app pub date -
Feb 23, 2024
filing date -
Aug 25, 2021
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Abstract
A gallium nitride crystal, containing F in which a total content of halogen elements other than F is 1/100 or less of a content of F and including a main surface 1 having an inclination of 0 degrees or more and 10 degrees or less from a (000-1) crystal plane in which the main surface 1 is a specific main surface A satisfying a specific condition regarding facet growth region in which a first line segment which is a virtual line segment extending in a first direction on the specific main surface A and having a length of 40 mm and a second line segment which is a virtual line segment extending in a second direction perpendicular to the first direction on the specific main surface A and having a length of 40 mm can be drawn, has fewer specific crystal defects and is of high quality,
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