PHOTODIODE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jun 6, 2024
app pub date -
Nov 29, 2023
filing date -
Dec 1, 2022
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Abstract
A photodiode includes a substrate, a device structure, a barrier ring region, a photosensitive region, an oxide ring, and an oxide layer. The substrate has a first surface and a second surface opposite to the first surface. The device structure includes an N-type doped region, a non-doped intrinsic layer, and a P-type doped region. The barrier ring region is disposed in the substrate at a periphery of an upper portion of the substrate and is spaced apart from the P-type doped region. The photosensitive region is located above the P-type doped region. The oxide ring is disposed on the substrate and surrounds the photosensitive region. The oxide layer is disposed between the oxide ring and the second surface. The P-type doped region includes a deep doped region and a shallow doped region that are adjacent to each other. A method for manufacturing the photodiode is also provided.
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