METHOD, STRUCTURE, AND MANUFACTURING METHOD FOR EXPANDING CHIP HEAT DISSIPATION AREA
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United States of America Patent
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Issued Date -
Jun 6, 2024
app pub date -
Sep 20, 2023
filing date -
Dec 2, 2022
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Abstract
Provided is a semiconductor device, comprising: a semiconductor chip where a circuit is formed on a side of a first surface of a chip substrate and a transition structure is integrated on a side of a second surface which is opposite to the first surface of the chip substrate, wherein the transition structure is obtained by causing a ratio of a substrate material of a chip substrate body to be less than a ratio of the substrate material on the side of the first surface and adding a thermal conductive material which has a higher thermal conductivity than the substrate material; and a thermal conductor which is joined to the second surface of the semiconductor chip and has a higher thermal conductivity than the substrate material.
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