EUV PHOTORESIST AND UNDERLAYER ADHESION MODULATION
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United States of America Patent
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Issued Date -
Jun 6, 2024
app pub date -
Oct 11, 2023
filing date -
Dec 6, 2022
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Abstract
Embodiments disclosed herein include a method of developing a patterning stack. In an embodiment, the method comprises providing a patterning stack, where the patterning stack comprises an underlayer and a photoresist over the underlayer, and where the underlayer has a first adhesion strength with the photoresist. The method may further comprise exposing and developing the photoresist with electromagnetic radiation and a developer, where scum remains on a surface of the underlayer. In an embodiment, the method further comprises treating the underlayer so that the underlayer has a second adhesion strength with the scum, and removing the scum.
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