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Abstract

A gallium-containing nitride crystals comprising: a top surface having a crystallographic orientation within 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen >5×10¹⁷ cm⁻³; an impurity concentration of oxygen between 2×10¹⁷ cm⁻³ and 1×10²⁰ cm⁻³; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl >1×10¹⁶ cm⁻³; a compensation ratio between 1.0 and 4.0; an absorbance per unit thickness of at least 0.01 cm⁻¹ at wavenumbers of 3175 cm⁻¹, 3164 cm⁻¹, and 3150 cm⁻¹; and wherein, at wavenumbers between 3200 cm⁻¹ and 3400 cm⁻¹ and between 3075 cm⁻¹ and 3125 cm⁻¹, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness >10% of the absorbance per unit thickness at 3175 cm⁻¹.

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First Claim