HIGHLY THERMALLY CONDUCTIVE SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jun 6, 2024
app pub date -
Jan 16, 2024
filing date -
Sep 3, 2021
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According to an embodiment, a highly thermally conductive silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. A thermal conductivity of the silicon nitride sintered body is not less than 80 W/(m·K). An average value of solid solution oxygen amounts of the silicon nitride crystal grains existing in a 20 μm×20 μm unit area in any cross section is not more than 0.2 wt %. An average value of major diameters of the silicon nitride crystal grains existing in a 50 μm×50 μm unit area in any cross section is not less than 1 μm and not more than 10 μm. An average of aspect ratios of the silicon nitride crystal grains existing in the 50 μm×50 μm unit area is not less than 2 and not more than 10.
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