HETEROJUNCTION SEMICONDUCTOR FLEXIBLE SUBSTRATE, MANUFACTRING METHOD THEREOF, AND ELECTRONIC DEVICE USING THE SAME
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United States of America Patent
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Issued Date -
May 30, 2024
app pub date -
Nov 16, 2023
filing date -
Nov 29, 2022
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Abstract
Disclosed is a heterojunction semiconductor flexible substrate in which an epitaxial oxide thin film layer is hetero-bonded to a thinned silicon substrate using a metal layer, a manufacturing method thereof, and the heterojunction semiconductor flexible substrate can be applied to sensor, actuator, transducer, or micro electro mechanical systems (MEMS) device using high functionality of the epitaxial oxide thin film layer of high quality as well as an electronic and/or optical device.
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