Importance

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Abstract

A photodetection that alleviates restrictions on a pixel layout in each pixel and capable of being miniaturized is provided. A photodetection device as provided includes a first substrate including a first semiconductor layer with a first surface and a second surface on a side opposite to the first surface, first and second charge accumulation sections provided on the first surface side, a first photoelectric conversion section in the first semiconductor layer, and first and second voltage application sections that apply a voltage to the first semiconductor layer between the first and second charge accumulation sections and the first photoelectric conversion section, and a second substrate including a second semiconductor layer with a third surface and a fourth surface on a side opposite to the third surface and is bonded to the first substrate, and a first pixel transistor on the third or fourth surface that outputs a pixel signal.

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First Claim