METHOD FOR FABRICATING EUV MASK AND PHOTOMASK USING THE EUV MASK

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United States of America Patent

APP PUB NO 20240176226A1
SERIAL NO

18432842

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Abstract

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An Extreme UltraViolet (EUV) mask includes: a reflective layer over a substrate; a capping layer including a porous hydrogen trapping layer over the reflective layer; and an absorption layer over the capping layer.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor Name Address # of filed Patents Total Citations
JEE, Tae Kwon Gyeonggi-do, KR 2 0
LEE, Sang Ho Gyeonggi-do, KR 314 2995
LIM, Chang Moon Gyeonggi-do, KR 19 50
PARK, Chan Ha Gyeonggi-do, KR 21 66
PARK, Suk Won Gyeonggi-do, KR 9 42

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