SYSTEM ARCHITECTURE, STRUCTURE AND METHOD FOR HYBRID RANDOM ACCESS MEMORY IN A SYSTEM-ON-CHIP
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United States of America Patent
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Issued Date -
May 23, 2024
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Jan 23, 2024
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Aug 24, 2020
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Abstract
A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.
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