MANUFACTURING METHOD OF IMAGE SENSOR STRUCTURE

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United States of America Patent

APP PUB NO 20240170527A1
SERIAL NO

18150801

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A manufacturing method of an image sensor structure including the following steps is provided. A substrate structure is provided. A first patterned hard mask layer is formed on the substrate structure. The first patterned hard mask layer has a first opening. A first ion implantation process is performed on the substrate structure by using the first patterned hard mask layer as a mask to form a first isolation region in the substrate structure. A first hard mask layer is formed on the first patterned hard mask layer. The first hard mask layer is formed in the first opening to form a first recess. The width of the first recess is smaller than the width of the first opening. A second ion implantation process is performed on the substrate structure by using the first hard mask layer as a mask to form a doped region in the substrate structure.

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Patent Owner(s)

Patent OwnerAddress
POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATIONHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Ching-Chun Hsinchu City, TW 25 360
Kao, Yu-Han New Taipei City, TW 6 14
Ou, Yi-Shu Hsinchu City, TW 1 0
Wu, Chien-Lung Hsinchu City, TW 27 100

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