GROUP III NITRIDE TRANSISTOR DEVICE
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United States of America Patent
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May 23, 2024
app pub date -
Nov 7, 2023
filing date -
Nov 17, 2022
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Abstract
In an embodiment, a Group III nitride transistor device includes a Group III nitride-based semiconductor body having a Group III nitride barrier layer arranged on a Group III nitride channel layer and forming a heterojunction therebetween capable of supporting a two-dimensional charge gas. A switching Group III nitride transistor device and a current sense Group III nitride transistor device are formed in the Group III nitride-based semiconductor body. The current sense Group III nitride transistor device is electrically insulated from the switching Group III nitride transistor device by local interruption of the two-dimensional charge gas.
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