REFLECTIVE MASK BLANK, REFLECTIVE MASK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, AND METHOD OF MANUFACTURING REFLECTIVE MASK

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United States of America Patent

APP PUB NO 20240168370A1
SERIAL NO

18382269

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1):

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Patent Owner(s)

Patent OwnerAddress
AGC INC5-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8405

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKAGI, Daijiro Tokyo, JP 24 20
ISHIKAWA, Ichiro Tokyo, JP 15 38
IWAOKA, Hiroaki Tokyo, JP 14 15
TAKI, Shunya Tokyo, JP 8 4

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