MOSFET-Based Temperature Sensing
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United States of America Patent
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Issued Date -
May 23, 2024
app pub date -
Nov 17, 2022
filing date -
Nov 17, 2022
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Abstract
A subthreshold-based MOSFET temperature sensor is provided for generating a subthreshold leakage current that is proportional to a difference between a gate-to-source voltage of a first transistor and a gate-to-source voltage of a second transistor. The subthreshold leakage current is mirrored to a detector for a temperature determination.
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