THREE-DIMENSIONAL MEMORY, FABRICATING METHOD THEREOF AND MEMORY SYSTEM
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United States of America Patent
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May 16, 2024
app pub date -
Dec 29, 2022
filing date -
Nov 10, 2022
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Abstract
The disclosure provides a three-dimensional (3D) memory, a method of fabricating a 3D memory and a memory system. The 3D memory can include a stack including alternately stacked first dielectric layers and conductive layers, and a channel structure extending through the stack and including a second dielectric layer and a blocking layer disposed in this order from outside to inside. The second dielectric layer can have a dielectric constant greater than or equal to 3.9.
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