SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
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United States of America Patent
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Issued Date -
May 16, 2024
app pub date -
Oct 2, 2023
filing date -
Nov 11, 2022
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Abstract
A semiconductor memory device comprises, a substrate, a mold structure including gate electrodes and mold insulating films alternately stacked on the substrate, and a channel structure penetrating the mold structure, wherein the channel structure comprises a semiconductor pattern and a dielectric film on the semiconductor pattern, wherein the dielectric film comprises a first crystalline film in contact with the gate electrodes and a second crystalline film between the first crystalline film and the semiconductor pattern, wherein the first crystalline film includes a first matrix and a first impurity and the second crystalline film includes a second matrix and a second impurity, wherein each of the first matrix and the second matrix comprises at least one of HfO2, HfxZr1-xO2 (0.5
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