SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
May 16, 2024
app pub date -
Apr 18, 2023
filing date -
Nov 10, 2022
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Abstract
A semiconductor device includes a gate trench formed in a substrate, a gate dielectric layer formed along profile of sidewalls and a bottom surface of the gate trench, first and second gate electrodes that are stacked over the gate dielectric layer to gap-fill a portion of the gate trench, a dipole inducing portion positioned between the second gate electrode and the gate dielectric layer and including a dipole bond and a non-dipole bond, and a capping layer suitable for gap-filling a remaining portion of the gate trench over the dipole inducing portion and the second gate electrode.
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