FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR
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United States of America Patent
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Issued Date -
May 16, 2024
app pub date -
Aug 1, 2023
filing date -
Aug 1, 2022
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Abstract
A field effect transistor includes a substrate; an electron channel layer disposed on the substrate; a barrier layer disposed on the electron channel layer; a hole channel layer disposed on the barrier layer; a p-type doped semiconductor material layer disposed on the hole channel layer; a source electrode including a first portion in ohmic contact with the electron channel layer and a second portion in ohmic contact with the p-type doped semiconductor material layer; a drain electrode in ohmic contact with the electron channel layer; and a gate electrode disposed facing the p-type doped semiconductor material layer, between the source and drain electrodes.
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