DIAGONAL VIA MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
May 16, 2024
app pub date -
Jan 24, 2024
filing date -
Jan 28, 2021
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Abstract
A method of manufacturing a plurality of via structures includes providing an integrated circuit (IC) photo mask including via features and assist features positioned exclusively along alternating diagonal grid lines of a grid, aligning the IC photo mask with first metal segments of a first metal layer of a semiconductor substrate, the first metal segments having a first spacing corresponding to a first pitch of the grid, performing one or more photolithography processes including the IC photo mask, thereby defining via structure locations corresponding to the via features, and forming via structures at the defined via structure locations.
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