Importance

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Abstract

An extreme ultraviolet light generation chamber device includes a chamber generating, at an internal space thereof, extreme ultraviolet light by irradiating a droplet target of tin with laser light to turn the droplet target into plasma; a target supply unit supplying the droplet target into the internal space; an extreme ultraviolet light concentrating mirror arranged in the internal space and including a reflection surface which reflects the extreme ultraviolet light; a first etching gas supply unit supplying an etching gas containing a hydrogen gas to the reflection surface having a flow velocity at the reflection surface variable; a data generation unit generating data reflecting reflectance of the extreme ultraviolet concentrating mirror; and a processor controlling the first etching gas supply unit to decrease the flow velocity when the data indicates that an amount of decrease in the reflectance is equal to or more than a reference value.

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First Claim