Importance

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Abstract

An active balun amplifier includes a first plurality of metal oxide semiconductor (MOS) transistors arranged in series, the first plurality of MOS transistors comprising a first input transistor of a first conductivity type, a second input transistor of a second conductivity type, and at least two common-gate transistors arranged in series between the first input transistor and the second input transistor, wherein a gate of the first input transistor and a gate of the second input transistor are tied to a common input, a second plurality of MOS transistors arranged in series, the second plurality of MOS transistors comprising a first common-source transistor of the first conductivity type, a second common-source transistor of the second conductivity type, and at least two cascode transistors arranged in series between the first common-source transistor and the second common-source transistor.

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First Claim