MASK EXPOSURE SYSTEM AND MASK EXPOSURE METHOD
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United States of America Patent
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Issued Date -
May 9, 2024
app pub date -
Jul 18, 2023
filing date -
Nov 8, 2022
priority date (Note) -
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status (Latency Note)
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Abstract
A mask exposure system includes a chamber, a stage configured to receive a mask, one or more mask temperature sensors, a beam source configured to irradiate an electron beam on the mask, a deflector configured to adjust a position at which the electron beam is irradiated on the mask by deflecting the electron beam based on a voltage level applied to the deflector, in the chamber, a chamber temperature sensor configured to measure an internal temperature of the chamber, and a controller configured to control a direction of deflection and a degree of deflection of the electron beam the deflector. The controller is configured to correct the voltage level applied to the deflector based on a difference between the temperature of the mask and the chamber.
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