SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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May 2, 2024
app pub date -
Apr 14, 2023
filing date -
Nov 2, 2022
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Abstract
A method for fabricating a semiconductor device includes: forming a first oxide layer containing a first element over a first electrode layer; forming a second oxide layer containing a second element over the first oxide layer; forming a stacked structure in which a plurality of first oxide layers and a plurality of second oxide layers are alternately stacked by repeating the forming of the first oxide layer and the forming of the second oxide layer a plurality of times; and forming a second electrode layer over the stacked structure, wherein a thickness of a lowermost first oxide layer among the plurality of first oxide layers is greater than a thickness of each of other first oxide layers.
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