SiC SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Issued Date -
May 2, 2024
app pub date -
Jan 11, 2024
filing date -
Oct 20, 2021
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Abstract
Provided is a method for producing SiC single crystal substrate including placing a SiC single crystal serving as a seed crystal and a SiC powder layer in a container in a state in which the SiC single crystal and the SiC powder layer are in contact with each other and performing a heat treatment by placing the container in an effective working zone of a firing furnace controlled to a temperature range within ±50° C. of a preset temperature to grow a SiC single crystal on the seed crystal.
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