SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 25, 2024
app pub date -
Dec 28, 2023
filing date -
Dec 28, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully