SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS

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United States of America Patent

APP PUB NO 20240130125A1
SERIAL NO

18343176

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Abstract

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A semiconductor device includes a conductive film containing molybdenum and a metal element. The metal element has a melting point lower than the melting point of molybdenum and forms a complete solid solution with molybdenum. The metal element as a material for composing the conductive film is at least one selected from the group consisting of, for example, titanium, vanadium, and niobium.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BEPPU, Takayuki Yokkaichi, JP 12 9
KITAMURA, Masayuki Yokkaichi, JP 100 1192
NATORI, Katsuaki Yokkaichi, JP 76 819
TORATANI, Kenichiro Yokkaichi, JP 52 91
TOYODA, Hiroshi Yokkaichi, JP 90 876
YAMAKAWA, Koji Yokkaichi, JP 113 1884

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