GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Apr 18, 2024
app pub date -
Dec 26, 2023
filing date -
Nov 25, 2019
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Abstract
A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.
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