RESONANCE DEVICE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Apr 18, 2024
app pub date -
Dec 28, 2023
filing date -
Jul 29, 2021
priority date (Note) -
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Abstract
A resonance device that includes: a first substrate having a first silicon substrate and a resonator, wherein the resonator includes a single-crystal silicon film and a first silicon oxide film interposed between the single-crystal silicon film and the first silicon substrate, and a through hole that passes through the single-crystal silicon film and the first silicon oxide film; a second substrate opposite the first substrate; a frame shaped bonding portion that bonds the first substrate to the second substrate to seal a vibration space of the resonator; and a first blocking member disposed in an interior of the through hole and surrounding a vibration portion of the resonator in a plan view of the first substrate so as to divide the first silicon oxide film, wherein the first blocking member has a lower helium permeability than the first silicon oxide film.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
MURATA MANUFACTURING CO LTD | JAPAN |
International Classification(s)

- 2023 Application Filing Year
- H03H Class
- 901 Applications Filed
- 148 Patents Issued To-Date
- 16.43 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
FUKUMITSU, Masakazu | Nagaokakyo-shi, JP | 36 | 26 |
# of filed Patents : 36 Total Citations : 26 | |||
HIGUCHI, Yoshiyuki | Nagaokakyo-shi, JP | 16 | 8 |
# of filed Patents : 16 Total Citations : 8 | |||
KISHI, Takehiko | Nagaokakyo-shi, JP | 11 | 80 |
# of filed Patents : 11 Total Citations : 80 |
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- 0 Citation Count
- H03H Class
- 0 % this patent is cited more than
- 1 Age
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