REFLECTIVE PHOTOMASK BLANK AND REFLECTIVE PHOTOMASK

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United States of America Patent

APP PUB NO 20240126160A1
SERIAL NO

18277053

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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There are provided a reflective photomask and a reflective photomask blank having a high contrast of a minute pattern to an inspection light and capable of minimizing the shadowing effect in EUV exposure. A reflective photomask blank (100) of this embodiment includes: a substrate (11); a reflective part (17); and a low reflective part (18), in which the low reflective part (18) is a multi-layer structural body having at least two or more layers including an absorption layer (14) and an outermost layer (15), an extinction coefficient k to a wavelength of 13.5 nm of the absorption layer (14) is k>0.041, and the film thickness of the low reflective part (18) is a film thickness satisfying 0.5×da+dc≤21.5 nm or a film thickness satisfying 0.5×da+dc≥27.5 nm, wherein the film thickness of the absorption layer (14) is da and the film thickness of the outermost layer (15) is dc.

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Patent Owner(s)

Patent OwnerAddress
TEKSCEND PHOTOMASK CORP1-5-2 HIGASHI-SHIMBASHI MINATO-KU TOKYO 105-7133

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
GODA, Ayumi Tokyo, JP 14 0
ICHIKAWA, Kenjiro Tokyo, JP 11 0
NAKANO, Hideaki Tokyo, JP 22 163
YAMAGATA, Yuto Tokyo, JP 7 0

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