NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Apr 4, 2024
app pub date -
Dec 7, 2021
filing date -
Jan 22, 2021
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Abstract
Provided is a nonvolatile memory device that makes it possible to achieve high performance. The nonvolatile memory device includes a first electrode, a memory material layer, a second electrode, and a first buffer layer. The memory material layer includes a first element and is provided on the first electrode. The second electrode is provided on the memory material layer. The first buffer layer is provided between the memory material layer and the second electrode. In the first buffer layer, a segregation of the first element is smaller than a segregation of the first element in the second electrode.
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