Silicon Carbide Device and Method for Forming a Silicon Carbide Device
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United States of America Patent
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Apr 4, 2024
app pub date -
Dec 1, 2023
filing date -
Jul 3, 2018
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Abstract
A silicon carbide device includes a silicon carbide substrate, a contact layer located on the silicon carbide substrate and including nickel and silicon, a barrier layer structure including titanium and tungsten, and a metallization layer comprising copper, wherein the contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure, wherein the barrier layer structure is located between the silicon carbide substrate and the metallization layer, wherein the metallization layer is configured as a contact pad of the silicon carbide device.
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