Multi-Gate Device And Related Methods

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United States of America Patent

APP PUB NO 20240112959A1
SERIAL NO

18526839

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Abstract

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A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

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TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor Name Address # of filed Patents Total Citations
CHIANG, Kuo-Cheng Hsinchu County, TW 533 619
JHAN, Yi-Ruei Keelung City, TW 59 38
JU, Shi Ning Hsinchu City, TW 209 1001
LIN, Zhi-Chang Hsinchu County, TW 162 353
PAN, Kuan-Ting Taipei City, TW 137 285
SU, Huan-Chieh Changhua County, TW 209 239
WANG, Chi-Hao Hsinchu County, TW 2 4

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3335716251501 - 1011 - 20020004000600080001000012000140001600018000200002200024000260002800030000320003400036000

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