REMOVING METAL CONTAMINATION FROM SURFACES OF A PROCESSING CHAMBER
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United States of America Patent
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Apr 4, 2024
app pub date -
Dec 8, 2023
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Oct 5, 2018
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A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl4), carbon tetrachloride (CCl4), a hydrocarbon (CxHy where x and y are integers) and molecular chlorine (Cl2), boron trichloride (BCl3), and thionyl chloride (SOCl2); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.
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