NON-VOLATILE MEMORY (NVM) CELL STRUCTURE TO INCREASE RELIABILITY
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Issued Date -
Mar 28, 2024
app pub date -
Dec 11, 2023
filing date -
Mar 3, 2020
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Abstract
Various embodiments of the present disclosure are directed towards a semiconductor structure including a first well region disposed within a substrate and comprising a first doping type. A conductive structure overlies the first well region. A pair of first doped regions is disposed within the first well region on opposing sides of the conductive structure. The pair of first doped regions comprise a second doping type opposite the first doping type. A pair of second doped regions is disposed within the first well region on the opposing sides of the conductive structure. The pair of second doped regions comprise the second doping type and are laterally offset from the pair of first doped regions by a non-zero distance.
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