SEMICONDUCTOR MEMORY DEVICE
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United States of America Patent
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Issued Date -
Mar 28, 2024
app pub date -
Sep 26, 2022
filing date -
Sep 26, 2022
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Abstract
A semiconductor memory device includes a substrate, and a plurality of layers vertically stacked over the substrate. A first layer in the plurality of layers includes an active region extending in a first direction parallel to a top surface of the substrate. The semiconductor memory device also includes a first conductive line that extends vertically in a second direction perpendicular to the top surface of the substrate and penetrates through the active region. The semiconductor memory device also includes a capacitor including a first electrode that is disposed in the active region.
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