Importance

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Abstract

A storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. The second conductive layer is disposed between the first conductive layer and the third conductive layer. The switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. The first area includes a first element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The second area includes a second element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The third area includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, and Nb, O or N, and a metal element selected from Te, Sb, Bi, Ti, and Zn.

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First Claim