MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE
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United States of America Patent
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Issued Date -
Mar 21, 2024
app pub date -
Jun 20, 2023
filing date -
Sep 21, 2022
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Abstract
A magnetoresistance memory device includes a lower electrode, a barrier layer, a variable resistance layer, an upper electrode, and a first layer stack. The lower electrode contains one of amorphous carbon and amorphous carbon nitride. The barrier layer is provided on the lower electrode and contains one of tungsten nitride (WN) and silicon tungsten nitride (WSiN). The variable resistance layer is provided on the barrier layer and contains a variable resistance material. The upper electrode is provided on the variable resistance layer and contains one of amorphous carbon and amorphous carbon nitride. The first layer stack is provided on the upper electrode and includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer.
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