SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 21, 2024
app pub date -
Nov 16, 2021
filing date -
Dec 4, 2020
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Abstract
Provided is a semiconductor device capable of reducing switching loss at turn-off while suppressing conduction loss. An emitter p− layer 11, a collector p layer 23, a drift layer 10, an emitter electrode 18, a collector electrode 28, an emitter-side gate electrode 17, an emitter n layer 12, a collector p− layer 23a, a collector-side gate electrode 27, and a collector n layer 22 configure a semiconductor device 1, and a total length of a first facing region of the emitter-side gate electrode 17 in a gate width direction facing an emitter layer p− 11 via a gate insulating film 15 is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode 27 facing an impurity layer 23a via a collector-side gate insulating film 25.
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