SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 21, 2024
app pub date -
Jan 6, 2023
filing date -
Sep 21, 2022
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Abstract
A method for manufacturing a semiconductor structure is provided. A substrate including a fin structure is received, provided or formed. A sacrificial gate layer is formed over the fin structure and a source/drain structure is formed adjacent to the sacrificial gate layer, wherein the sacrificial gate layer is surrounded by a dielectric structure. The sacrificial gate layer is removed, wherein a recess is defined by the dielectric structure. A work function layer is formed in the recess, wherein the work function layer includes an overhang portion at an opening of the recess. A thickness of the work function layer is reduced. A glue layer is formed over the work function layer. A semiconductor structure thereof is also provided.
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