Self aligned pattern formation post spacer etchback in tight pitch configurations

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 12106963
APP PUB NO 20240096627A1
SERIAL NO

18140425

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

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Patent Owner(s)

Patent OwnerAddress
ADEIA SEMICONDUCTOR SOLUTIONS LLC3025 ORCHARD PARKWAY SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burns, Sean D Hopewell Junction, US 73 760
Clevenger, Lawrence A Rhinebeck, US 787 5051
Colburn, Matthew E Schenectady, US 198 3400
Felix, Nelson M Briarcliff Manor, US 32 84
Kanakasabapathy, Sivananda K Niskayuna, US 196 2358
Penny, Christopher J Saratoga Springs, US 181 1878
Quon, Roger A Rhineback, US 65 312
Saulnier, Nicole A Albany, US 32 113

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