GATE CONTROL METHOD OF MOS-GATED POWER DEVICE
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United States of America Patent
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Issued Date -
Mar 14, 2024
app pub date -
Nov 27, 2023
filing date -
Jul 28, 2022
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Abstract
A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.
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