SEMICONDUCTOR LASER DEVICE
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United States of America Patent
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Issued Date -
Mar 14, 2024
app pub date -
Mar 10, 2021
filing date -
Mar 10, 2021
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Abstract
A semiconductor laser device of the present disclosure includes: a first-conductivity-type cladding layer, a first-conductivity-type-side optical guide layer, an active layer, a second-conductivity-type-side optical guide layer, a second-conductivity-type cladding layer, and a second-conductivity-type contact layer, laminated above a first-conductivity-type semiconductor substrate; and a resonator having a length Lc. The resonator includes a current confinement region having a length Lf and a current injection region having a length Lc−Lf. The current confinement region includes a ridge inner region, ridge outer regions provided on both sides thereof and having current non-injection structures, and cladding regions which are provided on both sides thereof and in which at least the contact layer and the cladding layer are removed. The current injection region includes a ridge region and the cladding regions provided on both sides thereof.
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