FIELD EFFECT TRANSISTOR
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United States of America Patent
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Issued Date -
Mar 14, 2024
app pub date -
Dec 28, 2021
filing date -
Dec 29, 2020
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Abstract
A field effect transistor comprising: a non-doped diamond layer which has a hydrogen-terminated surface; first and second p+diamond layers which are formed on the non-doped diamond layer and sandwich a hydrogen-terminated region; a source electrode which is formed on the first p+diamond layer and is made of metal; a drain electrode which is formed on the second p+diamond layer and is made of metal; an insulating layer which is formed on the hydrogen-terminated region of the non-doped diamond layer; and a gate electrode which is formed on the insulating layer, a mutual conductance being equal to or higher than 0.5 mS/mm at room temperatures, after an X-ray is applied for an amount of 5 Mgy.
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