ETCHING-DAMAGE-FREE INTERMETAL DIELECTRIC LAYER WITH THERMAL DISSIPATION FEATURE
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United States of America Patent
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Issued Date -
Mar 14, 2024
app pub date -
Feb 17, 2023
filing date -
Sep 8, 2022
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Abstract
A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.
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