SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND POWER CONVERSION APPARATUS

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United States of America Patent

APP PUB NO 20240087968A1
SERIAL NO

18323985

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An object is to provide a technique that lowers the self-inductance of a semiconductor device. A semiconductor device includes an insulating substrate having a circuit pattern formed on an upper surface thereof, a semiconductor element mounted on the upper surface of the circuit pattern, and a plurality of electrode terminals each having one end portion bonded to the upper surface of the circuit pattern. The electrode terminals having portions of mutual adjacency of the plurality of electrode terminals are coated with the insulating film having a thickness of less than 100 at least at the portions.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATION7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008310 ?1008310

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIMURA, Yoshitaka Tokyo, JP 82 631

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