SEMICONDUCTOR PROCESSING APPARATUS AND METHOD UTILIZING ELECTROSTATIC DISCHARGE (ESD) PREVENTION LAYER

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United States of America Patent

APP PUB NO 20240087945A1
SERIAL NO

18516703

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Abstract

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Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HUNG, Tsai-Hao Hsinchu, TW 43 71
KO, Ping-Cheng Hsinchu, TW 8 7
LIN, Tzu-Yang Hsinchu, TW 118 344
LIU, Fang-Yu Hsinchu, TW 40 134
WU, Cheng-Han Hsinchu, TW 111 309

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