STORAGE NODE LIGHT SHIELD FOR PIXEL OF IMAGE SENSOR

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United States of America Patent

APP PUB NO 20240079439A1
SERIAL NO

18093050

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Abstract

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A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; and a shield formed over the storage node which inhibits light from reaching the storage node, the shield including an extension which protrudes into the substrate and surrounds an outer periphery of the storage node.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chia-Chan Zhubei, TW 37 86
Lee, Yueh-Chuan Hsinchu, TW 56 431
Lin, Chung-Yi Hsinchu, TW 50 686

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